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MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92969" target="_blank" >RIV/00216305:26220/11:PU92969 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS

  • Original language description

    The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process, especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurement is the effective carrier lifetime, dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. The main objective of this work is to propose a solution, which would meet a few key parameters. It has toexhibit an immediate start-up of passivation properties, long-time stability, the reproducibility of lifetime measurement and the perfect cleaning of the wafer surface must be possible. Another purpose of this work is to identify the par

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Electronic Devices and Systems IMAPS CS International Conference 2011

  • ISBN

    978-80-214-4303-7

  • ISSN

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    134-139

  • Publisher name

    VUT Brno

  • Place of publication

    Brno

  • Event location

    Brno

  • Event date

    Jun 22, 2011

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article