MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92969" target="_blank" >RIV/00216305:26220/11:PU92969 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS
Original language description
The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process, especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurement is the effective carrier lifetime, dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. The main objective of this work is to propose a solution, which would meet a few key parameters. It has toexhibit an immediate start-up of passivation properties, long-time stability, the reproducibility of lifetime measurement and the perfect cleaning of the wafer surface must be possible. Another purpose of this work is to identify the par
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electronic Devices and Systems IMAPS CS International Conference 2011
ISBN
978-80-214-4303-7
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
134-139
Publisher name
VUT Brno
Place of publication
Brno
Event location
Brno
Event date
Jun 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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