Fast New Method for Temporary Chemical Passivation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103668" target="_blank" >RIV/00216305:26220/13:PU103668 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Fast New Method for Temporary Chemical Passivation
Original language description
The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurementis the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. sivation. This work deals with an examination of a different solution types for the chemicalpassivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up vel
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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