NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU93447" target="_blank" >RIV/00216305:26220/11:PU93447 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
Original language description
The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temper
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. IMAPS CS Int. Conf. Electronic Devices and Systems EDS 2011
ISBN
978-80-214-4303-7
ISSN
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e-ISSN
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Number of pages
279
Pages from-to
217-222
Publisher name
NOVPRESS s.r.o.
Place of publication
Nám. Republiky 614 00 Brno
Event location
Brno
Event date
Jun 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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