Backsides Analysis of Solar Cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU96575" target="_blank" >RIV/00216305:26220/11:PU96575 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Backsides Analysis of Solar Cells

Original language description

This paper describes a structure of silicon solar cell. There are used several methods used for an analysis of solar cells. These methods have been applied so far to the front side of the solar cells. This paper tries to present an experimental analysisof the back side solar cell using a electroluminescence method.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ECS Transactions

ISSN

1938-5862

e-ISSN

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Volume of the periodical

32

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

45-48

UT code for WoS article

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EID of the result in the Scopus database

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