Peculiarities of the obtaining process of silicon carbide and aluminum nitride

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU97098" target="_blank" >RIV/00216305:26220/11:PU97098 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
ruština
Original language name
Peculiarities of the obtaining process of silicon carbide and aluminum nitride
Original language description
Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials
ISBN
978-5-7681-0642-3
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
829-831
Publisher name
Southwest state university
Place of publication
Kursk
Event location
Almaty
Event date
Jun 9, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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