COMPARISON OF BEHAVIORS FOR DIFFERENT PECVD DIELECTRIC LAYERS FOR ARCHITECTURE APPLICATIONS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU97607" target="_blank" >RIV/00216305:26220/11:PU97607 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
COMPARISON OF BEHAVIORS FOR DIFFERENT PECVD DIELECTRIC LAYERS FOR ARCHITECTURE APPLICATIONS
Original language description
Demonstration of production of high efficient color crystalline silicon solar cells (for architecture application) is the main aim of this paper. Front side anti-reflective and passivation dielectric film (creating the required color) is designed as themultilayer stack of silicon nitride and silicon oxide. Both these layers are prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) with the target to keep as high as possible difference in the index of refraction resulting in sufficiently high optical reflection in the certain wavelength range. We calculated design (thicknesses) of various triple layer structures (SiNx, SiOx, SiNx) with the peak in optical reflection spectra over the whole visible range from 475 up to 675 nm. Finally we prepareda solar cells with one chosen multilayer stack of SiNx:H / SiOxNy:H / SiNx:H by nearly standard cell production sequence. Optical reflection of solar cells and quantum efficiency were measured. Reflection peak of incident light was found
Czech name
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Czech description
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Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Conference held in Hamburg, Germany
ISBN
3-936338-27-2
ISSN
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e-ISSN
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Number of pages
4800
Pages from-to
2298-2300
Publisher name
WIP
Place of publication
Hamburg
Event location
Hamburg
Event date
Sep 5, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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