Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101609" target="_blank" >RIV/00216305:26220/12:PU101609 - isvavai.cz</a>

Result on the web

<a href="http://www.sciencedirect.com/science/article/pii/S0040609012002295#" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609012002295#</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Original language description

Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic times depending on the dielectric type. By selecting appropriate technological and electrolytic conditions, the functionality of the capacitors can be optimized to meet the needs of a specific range, from 1 kHz to about 300 MHz operating frequencies.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

R - Projekt Ramcoveho programu EK

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

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Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

1-9

UT code for WoS article

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EID of the result in the Scopus database

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