Wire-Bonds Durability in High-Temperature Applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103648" target="_blank" >RIV/00216305:26220/13:PU103648 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Wire-Bonds Durability in High-Temperature Applications
Original language description
This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, that have high operating temperature. The paper is mainly focused on the behaviour and reliability of wire-bonds, which is used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in thebonds resistivity are studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software.
Czech name
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Czech description
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Electronic Devices and Systems - IMAPS CS International Conference 2013
ISBN
978-80-214-4754-7
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
38-43
Publisher name
VUT
Place of publication
Brno
Event location
Brno
Event date
Jun 26, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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