"Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105018" target="_blank" >RIV/00216305:26220/13:PU105018 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
"Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
Original language description
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantlyhigher value than 2.70, measured before thermal stressing.
Czech name
"Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
Czech description
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantlyhigher value than 2.70, measured before thermal stressing.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits
ISBN
978-981-07-6261-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
60-63
Publisher name
Institute of Research Engineers and Doctors
Place of publication
Kuala Lumpur, Malaisie
Event location
Kuala Lumpur
Event date
May 3, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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