Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105406" target="_blank" >RIV/00216305:26220/13:PU105406 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors
Original language description
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantlyhigher value than 2.70, measured before thermal stressing.
Czech name
Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors
Czech description
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantlyhigher value than 2.70, measured before thermal stressing.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Journal of Advancements in Electronics and Electrical Engineering
ISSN
2319-7498
e-ISSN
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Volume of the periodical
3
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
60-63
UT code for WoS article
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EID of the result in the Scopus database
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