A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU113729" target="_blank" >RIV/00216305:26220/15:PU113729 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices
Original language description
This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů