In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU120163" target="_blank" >RIV/00216305:26220/16:PU120163 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
Original language description
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Radiation Effects Data Workshop (REDW), 2016 IEEE
ISBN
978-1-4673-2730-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
IEEE
Place of publication
Portland, US
Event location
Portland
Event date
Jul 11, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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