Multifractal characterization of epitaxial silicon carbide on silicon

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU124466" target="_blank" >RIV/00216305:26220/17:PU124466 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1515/msp-2017-0049" target="_blank" >http://dx.doi.org/10.1515/msp-2017-0049</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1515/msp-2017-0049" target="_blank" >10.1515/msp-2017-0049</a>

Result language
angličtina
Original language name
Multifractal characterization of epitaxial silicon carbide on silicon
Original language description
The purpose of this study was to investigate the topography of silicon carbide ﬁlms at two steps of growth. Thetopography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the ﬁlms growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the ﬁlms composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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