A Note on the So-Called Inverse Memristor

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125224" target="_blank" >RIV/00216305:26220/17:PU125224 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

A Note on the So-Called Inverse Memristor

Original language description

It is shown that hysteresis loops pinched at the origin of the voltage-current space can also be generated by electric two-terminal devices of non-memristive nature. Conditions for generating such loops by nonlinear inductors and capacitors are revealed. General properties of the loops are analyzed and differences in comparison with the well-known fingerprints of memristors are discussed. based on this analysis, the mistaken identity of the so-called inverese memristor is identified.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/LD15033" target="_blank" >LD15033: Memristor Theory and Applications</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

MEMRISYS 2017

ISBN

978-1-5090-0057-9

ISSN

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e-ISSN

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Number of pages

1

Pages from-to

1-1

Publisher name

University of Southampton

Place of publication

Athens, Greece

Event location

Athens, Greece

Event date

Apr 3, 2017

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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