Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU140185" target="_blank" >RIV/00216305:26220/20:PU140185 - isvavai.cz</a>
Result on the web
<a href="https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398" target="_blank" >https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks
Original language description
As the semiconductor industry demands higher throughput for failure analysis, there is a constant need to rapidly speed up the sample preparation workflows. Here we present extended capabilities of the standard Xe plasma Focused Ion Beam failure analysis workflows by implementing a standalone laser ablation tool. Time-to-sample advantages of such workflow is shown on four distinct applications: cross-sectioning of a large solder ball, cross-sectioning of a deeply buried wire bond, cross-sectioning of the device layer of an OLED display, and removing the MEMS silicon cap to access underlying structures. In all of these workflows we have shown significant decrease in required process time while altogether avoiding the disadvantages of corresponding mechanical and chemical methods.
Czech name
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Czech description
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Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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