All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

FET Gate Driver Utilising Transient Gate Overvoltage

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU148858" target="_blank" >RIV/00216305:26220/23:PU148858 - isvavai.cz</a>

  • Result on the web

    <a href="https://ieeexplore.ieee.org/document/10168351" target="_blank" >https://ieeexplore.ieee.org/document/10168351</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/ISSE57496.2023.10168351" target="_blank" >10.1109/ISSE57496.2023.10168351</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    FET Gate Driver Utilising Transient Gate Overvoltage

  • Original language description

    In this paper a method for driving field effect transistors is described. This method uses a short high-voltage pulse on the gate to mitigate the effects of parasitic gate inductance and resistance. The proposed driver was able to reduce the fall time of drain voltage from 12 ns to 4 ns compared to conventional driving.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2023

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2023 46th International Spring Seminar on Electronics Technology (ISSE)

  • ISBN

    979-8-3503-3484-5

  • ISSN

    2161-2536

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    1-5

  • Publisher name

    IEEE

  • Place of publication

    neuveden

  • Event location

    Timisoara

  • Event date

    May 10, 2023

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article