Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F26%3A0198788" target="_blank" >RIV/00216305:26310/26:0198788 - isvavai.cz</a>
Result on the web
<a href="https://pubs.aip.org/aip/acp/article/3355/1/020005/3361620/Organic-field-effect-transistor-OFET-based-on" target="_blank" >https://pubs.aip.org/aip/acp/article/3355/1/020005/3361620/Organic-field-effect-transistor-OFET-based-on</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0290509" target="_blank" >10.1063/5.0290509</a>
Alternative languages
Result language
angličtina
Original language name
Organic field effect transistor (OFET) based on nanofibrous PVDF-MOF gate insulator
Original language description
This paper deals with the comparison of measured results of two types of organic thin film transistors, namely organic electrochemical transistor (OECT) and organic field-effect transistor (OFET), where the same ionic liquid (EMIM-TFSI) was used in both cases. All the current-voltage characteristics (input, output, transfer current and transfer voltage) were measured and discussed.
Czech name
—
Czech description
—
Classification
Type
J<sub>ost</sub> - Miscellaneous article in a specialist periodical
CEP classification
—
OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
AIP conference proceedings
ISSN
0094-243X
e-ISSN
1551-7616
Volume of the periodical
3355
Issue of the periodical within the volume
020005
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
020005-1-020005-10
UT code for WoS article
—
EID of the result in the Scopus database
—