Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F13%3APU103336" target="_blank" >RIV/00216305:26620/13:PU103336 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors
Original language description
Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral densitywere measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IVcharacteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage ca
Czech name
Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors
Czech description
Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral densitywere measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IVcharacteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage ca
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Scripta
ISSN
0031-8949
e-ISSN
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Volume of the periodical
85
Issue of the periodical within the volume
03
Country of publishing house
SE - SWEDEN
Number of pages
5
Pages from-to
1-5
UT code for WoS article
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EID of the result in the Scopus database
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