Contacts charge transport and additional noise properties of semiconductor CdTe sensors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103107" target="_blank" >RIV/00216305:26220/13:PU103107 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863" target="_blank" >http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/EDSSC.2012.6482863" target="_blank" >10.1109/EDSSC.2012.6482863</a>
Alternative languages
Result language
čeština
Original language name
Contacts charge transport and additional noise properties of semiconductor CdTe sensors
Original language description
Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.
Czech name
Contacts charge transport and additional noise properties of semiconductor CdTe sensors
Czech description
Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.
Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC),
ISBN
978-1-4673-5694-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
IEEE Thailand Section
Place of publication
Bangkok, Thailand
Event location
Bangkok
Event date
Dec 3, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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