Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F13%3APU104256" target="_blank" >RIV/00216305:26620/13:PU104256 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques
Original language description
A round-robin characterization is reported on the sputter depth profiling of [60 x (3.0 nm Mo/0.3 nm B4C/3.7 nm Si)] and [60 x (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B4C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and consof each instrumental approach are summarized.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
540
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
96-105
UT code for WoS article
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EID of the result in the Scopus database
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