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Photoconductivity of CdTe Semiconductor Radiation Detectors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F13%3APU106476" target="_blank" >RIV/00216305:26620/13:PU106476 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Photoconductivity of CdTe Semiconductor Radiation Detectors

  • Original language description

    This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current ? voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    International Journal of Computer Science and Electronics Engineering

  • ISSN

    2320-401X

  • e-ISSN

  • Volume of the periodical

    1

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    IN - INDIA

  • Number of pages

    4

  • Pages from-to

    31-34

  • UT code for WoS article

  • EID of the result in the Scopus database