Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F16%3APU120621" target="_blank" >RIV/00216305:26620/16:PU120621 - isvavai.cz</a>
Result on the web
<a href="http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/admi.201600512/abstract</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/admi.201600512" target="_blank" >10.1002/admi.201600512</a>
Alternative languages
Result language
angličtina
Original language name
Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers
Original language description
An array of semiconducting tungsten-oxide (WOx) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modified by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnected via gold electrodeposited inside and over the pores. Thus formed metal/semiconductor/metal microdevices are used for studying electron transport within the nanorods and across the multiplied nanoscale Au/WOx and W/WOx interfaces. The dominating effect of a Schottky junction that forms at the Au/WOx interface is justified for the as-anodized and air-annealed nanorods tested at room temperature, which transforms into an ohmic contact at elevated temperature, whereas the bottom W/WOx interface turns out to be Schottky-like and govern the electron transport, giving a higher barrier and a set of pronounced diode-like characteristics in the as-anodized nanoarrays. The amorphous nanorods reveal bipolar resistive switching with a gradual reset due to the field-driven movement of oxygen vacancies and induced modifications of the Au/WOx Schottky interface. The unique electrical and interfacial properties of the nanoscale Au/WOx/W multijunctions form a basis for their application in emerging resistive random access memories or 3D gas-sensing nanodevices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Materials Interfaces
ISSN
2196-7350
e-ISSN
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Volume of the periodical
3
Issue of the periodical within the volume
19
Country of publishing house
DE - GERMANY
Number of pages
12
Pages from-to
1600512-1600524
UT code for WoS article
000386058100023
EID of the result in the Scopus database
2-s2.0-84983611299