HfO2 nanostructure arrays via porous-alumina-assisted anodization of hafnium layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU126280" target="_blank" >RIV/00216305:26620/17:PU126280 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
HfO2 nanostructure arrays via porous-alumina-assisted anodization of hafnium layers
Original language description
Hafnium dioxide (HfO2) due to its excellent electrical and optical properties complemented by chemical and thermal stability is a promising material in the fields of electroceramics, optics, and electronics. Nanostructuring of hafnium oxide opens more opportunities for creating functional materials with new properties and applications. Here we report, for the first time, the formation of HfO2 nanostructures aligned on substrates via the porous-anodic-alumina (PAA)-assisted anodization of hafnium layers prepared by magnetron sputtering. A layer of Hf followed by a layer of Al sputtered onto a SiO2 substrate (an Al/Hf bilayer) is used as the initial sample. In the anodizing approach, the aluminum layer is first converted to PAA [ ], then the Hf film is oxidized through the alumina nanopores. A major difficulty is that anodic HfO2 films are crystalline, and the transport number for Hf4+ cation is almost zero (0.05). These result in undesired oxygen evolution and hinder oxide penetration into the pores. To
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)
Result continuities
Project
<a href="/en/project/GA17-13732S" target="_blank" >GA17-13732S: Multifunctional nanoarrays of HfO2- and ZrO2-based electroceramics highly aligned on substrates (ZiHaN)</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů