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The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU134582" target="_blank" >RIV/00216305:26620/19:PU134582 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0013468619319000?via%3Dihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.electacta.2019.135029" target="_blank" >10.1016/j.electacta.2019.135029</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

  • Original language description

    Hafnium-oxide nanostructures of controlled composition and properties are in demand for modern electronic and optical engineering. Here hafnium-oxide nanostructured films are synthesized on substrates via the anodizing/re-anodizing of a thin Hf layer through a porous anodic alumina (PAA) film in 0.2 M H3PO4 electrolyte and examined by SEM, EIS, and Mott-Schottky analysis. The films are composed of HfO nanorods, which grow in the pores, anchored to a continuous HfO2 bottom layer by tiny HfOx nanoroots penetrating the alumina barrier layer. The understanding of film nucleation and growth is advanced through disclosing the hidden features and field-assisted modifications of the metaloxide interfaces, such as O-2-filled nanosized voids and individual hafnium-oxide nanoroots dominating within the alumina barrier layer and securing electron transport to each nanorod. The films reveal a unique combination of electrical properties, such that the bottom oxide behaves like an ideal dielectric whereas the roots and rods show semiconducting behavior. Potential applications include high-k dielectrics for high-voltage electrolytic capacitors, semiconducting active layers for gas sensing, or photoanodes for photoelectrochemical water splitting.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    21001 - Nano-materials (production and properties)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Electrochimica Acta

  • ISSN

    0013-4686

  • e-ISSN

    1873-3859

  • Volume of the periodical

    327

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    12

  • Pages from-to

    1-12

  • UT code for WoS article

    000494834100042

  • EID of the result in the Scopus database

    2-s2.0-85073293877