Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC(0001)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F18%3APU127834" target="_blank" >RIV/00216305:26620/18:PU127834 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/18:00490052 RIV/00216208:11320/18:10391131
Result on the web
<a href="http://dx.doi.org/10.1116/1.5008977" target="_blank" >http://dx.doi.org/10.1116/1.5008977</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.5008977" target="_blank" >10.1116/1.5008977</a>
Alternative languages
Result language
angličtina
Original language name
Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC(0001)
Original language description
The thermal decomposition of SiC wafers has proven to be a reliable method to obtain epitaxial graphene. However, the sublimation of Si induced by annealing of SiC substrates is notoriously difficult to control. To tackle the problem, the authors developed a fairly simple apparatus for the growth of micrometer-scale homogeneous single- and bilayer graphene in Ar atmosphere. The device is a furnace based on a considerably improved version of a directly heated element, and can achieve the desired sample quality reproducibly and efficiently. The authors characterize the samples prepared using this device by atomic force microscopy, low energy electron diffraction, Raman spectroscopy, scanning tunneling microscopy, x-ray photoemission spectroscopy, and nearedge x-ray absorption spectroscopy.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
ISSN
0734-2101
e-ISSN
1520-8559
Volume of the periodical
36
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
„031401-1“-„031401-6“
UT code for WoS article
000432372400024
EID of the result in the Scopus database
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