Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU130384" target="_blank" >RIV/00216305:26620/19:PU130384 - isvavai.cz</a>
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/1361-6528/aaf11e/meta" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6528/aaf11e/meta</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6528/aaf11e" target="_blank" >10.1088/1361-6528/aaf11e</a>
Alternative languages
Result language
angličtina
Original language name
Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy
Original language description
The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron microscopy measurements show that the Ga catalyst droplet was unintentionally consumed during growth. Concurrent radial growth, a rough surface morphology and tapering of nanowires grown under boron flux suggest that this droplet consumption is due to reduced Ga adatom diffusion on the nanowire sidewalls in the presence of boron. Modelling of the nanowire growth puts the diffusion length of Ga adatoms under boron flux at around 700–1000 nm. Analyses of the nanowire surfaces show regions of high boron concentration, indicating the surfactant nature of boron in GaAs.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)
Result continuities
Project
<a href="/en/project/EF16_027%2F0008371" target="_blank" >EF16_027/0008371: International mobility of researchers at the Brno University of Technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
NANOTECHNOLOGY
ISSN
0957-4484
e-ISSN
1361-6528
Volume of the periodical
30
Issue of the periodical within the volume
6
Country of publishing house
GB - UNITED KINGDOM
Number of pages
10
Pages from-to
„065602-1“-„065602-10“
UT code for WoS article
000452724500002
EID of the result in the Scopus database
2-s2.0-85058367784