Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU133599" target="_blank" >RIV/00216305:26620/19:PU133599 - isvavai.cz</a>
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201800368" target="_blank" >10.1002/pssb.201800368</a>
Alternative languages
Result language
angličtina
Original language name
Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires
Original language description
Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)
Result continuities
Project
<a href="/en/project/EF16_027%2F0008371" target="_blank" >EF16_027/0008371: International mobility of researchers at the Brno University of Technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN
0370-1972
e-ISSN
1521-3951
Volume of the periodical
256
Issue of the periodical within the volume
5
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
1800368-1800368
UT code for WoS article
000476946300017
EID of the result in the Scopus database
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