Electroforming in Metal-Oxide Memristive Synapses
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU135864" target="_blank" >RIV/00216305:26620/20:PU135864 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsami.9b19362" target="_blank" >https://pubs.acs.org/doi/10.1021/acsami.9b19362</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.9b19362" target="_blank" >10.1021/acsami.9b19362</a>
Alternative languages
Result language
angličtina
Original language name
Electroforming in Metal-Oxide Memristive Synapses
Original language description
Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses and have been already used to construct neuromorphic systems with in-memory computing and unsupervised learning capabilities; moreover, the small size and simple fabrication process of memristors make them ideal candidates for ultradense configurations. So far, the properties of memristive electronic synapses (i.e., potentiation/depression, relaxation, linearity) have been extensively analyzed by several groups. However, the dynamics of electroforming in memristive devices, which defines the position, size, shape, and chemical composition of the conductive nanofilaments across the device, has not been analyzed in depth. By applying ramped voltage stress (RVS), constant voltage stress (CVS), and pulsed voltage stress (PVS), we found that electroforming is highly affected by the biasing methods applied. We also found that the technique used to deposit the oxide, the chemical composition of the adjacent metal electrodes, and the polarity of the electrical stimuli applied have important effects on the dynamics of the electroforming process and in subsequent post-electroforming bipolar resistive switching. This work should be of interest to designers of memristive neuromorphic systems and could open the door for the implementation of new bioinspired functionalities into memristive neuromorphic systems.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS applied materials & interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
12
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
11806-11814
UT code for WoS article
000526609100050
EID of the result in the Scopus database
2-s2.0-85080945068