The influence of cobalt (Co) doping on the electrical and dielectric properties of LaCr1-xCoxO3 perovskite-oxide compounds
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU139193" target="_blank" >RIV/00216305:26620/20:PU139193 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S1369800119319043?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800119319043?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2020.104923" target="_blank" >10.1016/j.mssp.2020.104923</a>
Alternative languages
Result language
angličtina
Original language name
The influence of cobalt (Co) doping on the electrical and dielectric properties of LaCr1-xCoxO3 perovskite-oxide compounds
Original language description
We synthesized LaCr1-xCoxO3 (x = 0, 0.01, 0.10, 0.15, 0.20, 0.30) compounds by solid-state reaction method. SEM and EDX analyses were carried out to study their structural and chemical properties. Furthermore, their electrical/dielectric properties including real and imaginary part of dielectric function, real and imaginary part of impedance, conductivity, were investigated at wide temperature (between -100 degrees C and 100 degrees C) and frequency range (1 Hz-10(7) Hz) by using Broadband Impedance Spectroscopy (Novocontrol). Temperature dependent power law exponent, s, showed that different conduction mechanisms need to be considered to study the conduction in the investigated samples. The calculated activation energies from the conductivity varied between 0.170 eV and 0.388 eV indicating that the oxygen vacancies and small polaron hopping conduction taken place in the samples. Moreover, the Nyquist plots demonstrated that grain and grain boundary relaxations happen in the investigated specimens.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
O - Projekt operacniho programu
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN
1369-8001
e-ISSN
1873-4081
Volume of the periodical
109
Issue of the periodical within the volume
1
Country of publishing house
GB - UNITED KINGDOM
Number of pages
13
Pages from-to
„104923-1“-„104923-13“
UT code for WoS article
000513161300011
EID of the result in the Scopus database
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