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The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU141352" target="_blank" >RIV/00216305:26620/21:PU141352 - isvavai.cz</a>

  • Result on the web

    <a href="https://link.springer.com/article/10.1007%2Fs10854-021-06589-9" target="_blank" >https://link.springer.com/article/10.1007%2Fs10854-021-06589-9</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s10854-021-06589-9" target="_blank" >10.1007/s10854-021-06589-9</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

  • Original language description

    Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

  • ISSN

    0957-4522

  • e-ISSN

    1573-482X

  • Volume of the periodical

    32

  • Issue of the periodical within the volume

    15

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    12

  • Pages from-to

    20755-20766

  • UT code for WoS article

    000673413000001

  • EID of the result in the Scopus database

    2-s2.0-85111495033