The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU141352" target="_blank" >RIV/00216305:26620/21:PU141352 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007%2Fs10854-021-06589-9" target="_blank" >https://link.springer.com/article/10.1007%2Fs10854-021-06589-9</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-021-06589-9" target="_blank" >10.1007/s10854-021-06589-9</a>
Alternative languages
Result language
angličtina
Original language name
The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions
Original language description
Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522
e-ISSN
1573-482X
Volume of the periodical
32
Issue of the periodical within the volume
15
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
12
Pages from-to
20755-20766
UT code for WoS article
000673413000001
EID of the result in the Scopus database
2-s2.0-85111495033