Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU142766" target="_blank" >RIV/00216305:26620/22:PU142766 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28110/22:63548719
Result on the web
<a href="https://link.springer.com/article/10.1007/s10853-021-06846-6" target="_blank" >https://link.springer.com/article/10.1007/s10853-021-06846-6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10853-021-06846-6" target="_blank" >10.1007/s10853-021-06846-6</a>

Result language
angličtina
Original language name
Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers
Original language description
This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high‑ quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal‑oxide‑semiconductor technology, and is thus promising for tunable physical or chemical sensors.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20501 - Materials engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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