Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F22%3A63548719" target="_blank" >RIV/70883521:28110/22:63548719 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26620/22:PU142766

Result on the web

<a href="https://link.springer.com/article/10.1007%2Fs10853-021-06846-6" target="_blank" >https://link.springer.com/article/10.1007%2Fs10853-021-06846-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10853-021-06846-6" target="_blank" >10.1007/s10853-021-06846-6</a>

Result language

angličtina

Original language name

Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Original language description

This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based Field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high-quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of mechanical stress can be obtained during the preparation of thin films, which enables the cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal-oxide-semiconductor technology and is thus promising for tunable physical or chemical sensors.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

—

Continuities

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Materials Science

ISSN

0022-2461

e-ISSN

—

Volume of the periodical

57

Issue of the periodical within the volume

Neuveden

Country of publishing house

US - UNITED STATES

Number of pages

13

Pages from-to

"1923–1935"

UT code for WoS article

000739772900001

EID of the result in the Scopus database

2-s2.0-85122377631