An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU145652" target="_blank" >RIV/00216305:26620/22:PU145652 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S2468023022001134?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2468023022001134?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfin.2022.101832" target="_blank" >10.1016/j.surfin.2022.101832</a>
Alternative languages
Result language
angličtina
Original language name
An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode
Original language description
In the present investigation, titanium dioxide (TiO2) and Euphorium (Eu) doped TiO2 films were deposited on both glass and n-Si substrates via employing sol-gel spin coating technique to characterize optical, morphological, chemical features and scrutinize their heterojunction applications. The atomic force microscope (AFM), Ultraviolet-visible (UV-VIS) and Raman studies were conducted to inspect the morphological, optical, chemical, and crystal phase properties of thin films, respectively. The optical band gap of TiO2 films widened from 3.40 eV to 3.44 eV with increasing Eu doping concentration. The Raman analyses displayed that the deposited TiO2 films were in the anatase phase. The AFM images indicated Eu substitution influences the surface structure of the fabricated films. The optoelectrical properties of the fabricated heterojunction structures were determined under dark and various illumination intensities. When the optoelectrical properties of the obtained diodes were examined, it was realized that while the ideality factor (eta) and series resistance (RS) decreased, the barrier height (FB), photosensitivity and photoresponse parameters increased with the optimum Eu concentration. The results underscore that Eu substitution into TiO2 structure influences structural, optical, and electrical parameters. Thus, the Eu material could be used as a potential candidate to improve the optoelectrical performance of n-TiO2/p-Si.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
SURFACES AND INTERFACES
ISSN
2468-0230
e-ISSN
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Volume of the periodical
30
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
„101832“-„“
UT code for WoS article
000820334100002
EID of the result in the Scopus database
2-s2.0-85125522622