High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU147372" target="_blank" >RIV/00216305:26620/23:PU147372 - isvavai.cz</a>
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/aelm.202200980" target="_blank" >10.1002/aelm.202200980</a>
Alternative languages
Result language
angličtina
Original language name
High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics
Original language description
Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Electronic Materials
ISSN
2199-160X
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
2
Country of publishing house
DE - GERMANY
Number of pages
11
Pages from-to
1-11
UT code for WoS article
000000000001111
EID of the result in the Scopus database
2-s2.0-85147178219