Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU138194" target="_blank" >RIV/00216305:26620/19:PU138194 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications
Original language description
We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings
ISBN
978-1-7281-5638-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
IEEE
Place of publication
NEW YORK
Event location
Krakow
Event date
Dec 2, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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