Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F16%3A00093661" target="_blank" >RIV/00216224:14740/16:00093661 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26620/16:PU116555
Result on the web
<a href="http://link.springer.com/article/10.1007%2Fs10853-015-9648-y" target="_blank" >http://link.springer.com/article/10.1007%2Fs10853-015-9648-y</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10853-015-9648-y" target="_blank" >10.1007/s10853-015-9648-y</a>

Result language
angličtina
Original language name
Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
Original language description
We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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