Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU130122" target="_blank" >RIV/00216305:26620/19:PU130122 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/19:00109304
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >10.1016/j.tsf.2018.12.035</a>
Alternative languages
Result language
angličtina
Original language name
Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup
Original language description
We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
670
Issue of the periodical within the volume
NA
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
105-112
UT code for WoS article
000454719000016
EID of the result in the Scopus database
2-s2.0-85058799519