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Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F19%3A00109304" target="_blank" >RIV/00216224:14310/19:00109304 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216305:26620/19:PU130122

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2018.12.035</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >10.1016/j.tsf.2018.12.035</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

  • Original language description

    We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    670

  • Issue of the periodical within the volume

    December

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    8

  • Pages from-to

    105-112

  • UT code for WoS article

    000454719000016

  • EID of the result in the Scopus database

    2-s2.0-85058799519