Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F19%3A00109304" target="_blank" >RIV/00216224:14310/19:00109304 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26620/19:PU130122

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2018.12.035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >10.1016/j.tsf.2018.12.035</a>

Result language

angličtina

Original language name

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Original language description

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Volume of the periodical

670

Issue of the periodical within the volume

December

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

105-112

UT code for WoS article

000454719000016

EID of the result in the Scopus database

2-s2.0-85058799519