Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU149032" target="_blank" >RIV/00216305:26620/23:PU149032 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S2468023023004881?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2468023023004881?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfin.2023.103118" target="_blank" >10.1016/j.surfin.2023.103118</a>
Alternative languages
Result language
angličtina
Original language name
Synthesis and characterization of half-Heusler ScPtBi films via three-source magnetron co-sputtering on Nb superconductor buffer layer
Original language description
The half-Heusler compounds exhibit simultaneous electrical, optical, and magnetic properties hence extensive research efforts have recently been dedicated to their development in diverse applications. Herein, we detail the fabrication and magnetic characterization of thin film ScPtBi was grown at 300 degrees C on Nb-buffered Si (100) single crystals (Nb/Si (100)) by using magnetron co-sputtering. X-ray diffraction examinations have unveiled the polycrystalline growth nature of the films. It is seen that the obtained ScPtBi thin film is strained by 1.4% compared to the single crystal of ScPtBi. The morphological observations, conducted by scanning electron mi-croscopy (SEM), revealed that the Nb buffer layer has a smooth and crack-free surface. Moreover, it has been observed that the Bi islands are formed on the surface of ScPtBi film, which is confirmed by the high-resolution scanning transmission electron microscopy (HR-STEM) analyses. The presence of the weak antilocalization (WAL) effect has been observed in the samples. The Hikami-Larkin-Nagaoka (HLN) equation was used to analyze experimental data, aiming to calculate the phase coherence length (l & phi;) and the coefficient & alpha;. As the temperature increased, the phase coherence length decreased from 39 nm to 24 nm. The coefficient & alpha; was determined to be in the range of 500 to 1100. As a result, it has been concluded that the presence of the WAL effect might be connected to the strong spin-orbit coupling (SOC) nature of the films instead of from topologically protected surface states.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10400 - Chemical sciences
Result continuities
Project
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Continuities
O - Projekt operacniho programu
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
SURFACES AND INTERFACES
ISSN
2468-0230
e-ISSN
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Volume of the periodical
40
Issue of the periodical within the volume
103118
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
„“-„“
UT code for WoS article
001039896600001
EID of the result in the Scopus database
2-s2.0-85165257810