An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU144989" target="_blank" >RIV/00216305:26620/22:PU144989 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/abs/pii/S0025540821004931?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0025540821004931?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.materresbull.2021.111696" target="_blank" >10.1016/j.materresbull.2021.111696</a>
Alternative languages
Result language
angličtina
Original language name
An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films
Original language description
Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MATERIALS RESEARCH BULLETIN
ISSN
0025-5408
e-ISSN
1873-4227
Volume of the periodical
149
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
„111696-1“-„111696-7“
UT code for WoS article
000780817200006
EID of the result in the Scopus database
2-s2.0-85121818242