Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F25%3APU154828" target="_blank" >RIV/00216305:26620/25:PU154828 - isvavai.cz</a>

Result on the web

<a href="https://onlinelibrary.wiley.com/doi/10.1002/admt.202302219" target="_blank" >https://onlinelibrary.wiley.com/doi/10.1002/admt.202302219</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admt.202302219" target="_blank" >10.1002/admt.202302219</a>

Result language

angličtina

Original language name

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics

Original language description

Electrolyte-gated field effect transistors and electrochemical transistors have emerged as powerful components for bioelectronic sensors and biopotential recording devices. A set of parameters must be considered when developing devices to amplify weak electrophysiological signals. These include maximum transconductance values, cut-off frequencies, and large on/off current ratios. Organic polymer-based devices have recently dominated the field, especially when considering flexibility as a key factor. Oxide semiconductors may also offer these features, as well as advantages like higher mobility. Herein, flexible, ultrathin, indium tin oxide (ITO) electrolyte-gated transistors are reported. These accumulation-mode devices combine n-type operation with mu e = 9.5 cm2 Vs-1, high transconductance (gm = 44 mS), and on/off ratios (105) as well as optically transparent layouts. While oxides are normally considered brittle, mechanically flexible ITO layers are obtained by room temperature deposition of amorphous layers onto parylene C. This process results in low strain, producing devices that survive bending. ITO electrochemically degrades, however, with cycling. To overcome this, the surface is passivated with high dielectric constant inert capping layers of Ta2O5 or Ta2O5/AlN. This greatly improves stability while preserving low gate voltages. Based on their overall performance, ITO-based EGFETs are promising for bioelectronics. Conducting polymers is not the only way, inorganic oxides can make electrochemical transistors too. It is shown that ultrathin, flexible, ITO electrolyte-gated transistors are designed for bioelectronics. These transistors demonstrate high transconductance, excellent on/off ratios, and mechanical flexibility. Via surface passivation strategies are used to enhance the electrochemical stability of ITO, making these devices promising candidates for future in vivo and in vitro bioelectronic applications. image

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20501 - Materials engineering

Project

—

Continuities

—

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Advanced Materials Technologies

ISSN

2365-709X

e-ISSN

—

Volume of the periodical

10

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

„2302219“-„“

UT code for WoS article

001308436100001

EID of the result in the Scopus database

2-s2.0-85203340401