Characterization of WSe2 Films Using Reflection Kikuchi Diffraction in the Scanning Electron Microscope and Multivariate Statistical Analyses

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0199560" target="_blank" >RIV/00216305:26620/26:0199560 - isvavai.cz</a>

Result on the web

<a href="https://pubs.acs.org/doi/10.1021/acsnano.5c10753" target="_blank" >https://pubs.acs.org/doi/10.1021/acsnano.5c10753</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsnano.5c10753" target="_blank" >10.1021/acsnano.5c10753</a>

Result language

angličtina

Original language name

Characterization of WSe2 Films Using Reflection Kikuchi Diffraction in the Scanning Electron Microscope and Multivariate Statistical Analyses

Original language description

The study of thin films and two-dimensional (2D) materials, including transition metal dichalcogenides such as WSe2 offers opportunities to leverage their properties in advanced sensors, quantum technologies, and devices to optimize functional performance. In this work, we characterize thin WSe2 samples with variable thicknesses using scanning electron microscope (SEM)-based techniques focused on analysis of the backscattered electron signal and Kikuchi diffraction patterns. These data were collected via a pixelated electron-counting direct electron detector positioned below the pole piece primarily configured for reflection Kikuchi diffraction (RKD), and a similar detector placed in the more conventional electron backscatter diffraction (EBSD) geometry. In addition to conventional pattern analysis for orientation microscopy, multivariate statistical methods (MSA) based on principal component analysis were applied to analyze diffraction patterns and differentiate thickness variations and crystal orientations within the thin films through data clustering. These results were compared with atomic force microscopy to validate thickness measurements. Our findings indicate that RKD combined with MSA is highly effective for characterizing 2D materials, enabling simultaneous assessment of thickness and crystallographic orientation. Systematic acceleration voltage variations in RKD experiments and comparisons with EBSD data suggest that the thickness dependency arises from inelastic scattering of diffracted electrons, which affects pattern contrast in the thin-film regime. Collection and analysis of patterns obtained from monolayer, bilayer, and trilayer of WSe2 are also demonstrated. This work reinforces the utility of SEM-based techniques, such as RKD, as valuable tools for the materials characterization toolkit, particularly for thin films and 2D materials.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

—

Continuities

R - Projekt Ramcoveho programu EK

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ACS Nano

ISSN

1936-0851

e-ISSN

1936-086X

Volume of the periodical

44

Issue of the periodical within the volume

19

Country of publishing house

US - UNITED STATES

Number of pages

11

Pages from-to

38360-38370

UT code for WoS article

001603147000001

EID of the result in the Scopus database

2-s2.0-105021344028