New concept of vertical power NPN bipolar transistor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F10%3A%230000050" target="_blank" >RIV/26821532:_____/10:#0000050 - isvavai.cz</a>
Result on the web
<a href="http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2010/" target="_blank" >http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2010/</a>
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
New concept of vertical power NPN bipolar transistor
Original language description
A new concept of power transistor layout so called "strainer emitter" has been proposed and experimentally verified. The strainer emitter has brought the increase of current gain and extension of Beta plateau towards higher currents. The physical mechanisms of this proposal have been quantitatively clarified in many aspects. For exact quantitative model it will be necessary to use simpler geometry structures based on single emitter transistors.
Czech name
—
Czech description
—

Project
<a href="/en/project/FR-TI1%2F582" target="_blank" >FR-TI1/582: *Research and development of advanced complementary bipolar technology for manufacturing of integrated circuits.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 10th International Seminar on Power Semiconductors ISPS'10
ISBN
978-80-01-04602-9
ISSN
—
e-ISSN
—
Number of pages
281
Pages from-to
107-112
Publisher name
České centrum IET, České vysoké učení technické v Praze
Place of publication
Praha, Česká republika
Event location
Praha, Česká republika
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)