Anisotropic etching of silicon by TMAH

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F11%3A%230000043" target="_blank" >RIV/26821532:_____/11:#0000043 - isvavai.cz</a>
Result on the web
<a href="http://csacg.fzu.cz/" target="_blank" >http://csacg.fzu.cz/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Anisotropic etching of silicon by TMAH
Original language description
We have investigated the TMAH etch conditions of the Si(110) wafers. We present data on the etch rates of the {110} and {111} planes for different composition of the TMAH etchant. We further discuss the characteristics of the masks from both material andcrystallographic orientation points of view, which are needed for successful micromachining.
Czech name
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Czech description
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Project
<a href="/en/project/FR-TI3%2F031" target="_blank" >FR-TI3/031: Research and Development of Technologies of Manufacturing of Novel Species of Silicon Wafers</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 21th Joint Seminar Development of Materials Science in Research and Education
ISBN
978-80-8134-002-4
ISSN
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e-ISSN
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Number of pages
85
Pages from-to
28-29
Publisher name
Slovak Society for Industrial Chemistry
Place of publication
Bratislava, Slovensko
Event location
Kežmarské Žlaby, Slovensko
Event date
Jan 1, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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