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Improvement of luminescence properties of n-GaN using TEGa precursor

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010358" target="_blank" >RIV/46747885:24220/20:00010358 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/20:00533199 RIV/00216208:11320/20:10423674

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125383" target="_blank" >10.1016/j.jcrysgro.2019.125383</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Improvement of luminescence properties of n-GaN using TEGa precursor

  • Original language description

    The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. MOVPE grown GaN buffer layers on sapphire substrates are usually grown from TMGa precursor at the temperatures above 1000 degrees C. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Both defect bands are detrimental for all major nitride device applications. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n-doped GaN layers. Different kinds of growth parameters, such as growth temperature or growth rate, have been studied. It is also shown that the change of carrier gas (H-2 or N-2) has very strong influence on the layer quality. H-2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N-2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single V-Ga in H-2 atmosphere and clustering of V-Ga to big complexes ((V-Ga)(3)(V-N)(n)) in N-2 atmosphere.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20500 - Materials engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Crystal Growth

  • ISSN

    0022-0248

  • e-ISSN

  • Volume of the periodical

    531

  • Issue of the periodical within the volume

    FEB

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    7

  • Pages from-to

  • UT code for WoS article

    000504205900023

  • EID of the result in the Scopus database