Improvement of luminescence properties of n-GaN using TEGa precursor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010358" target="_blank" >RIV/46747885:24220/20:00010358 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/20:00533199 RIV/00216208:11320/20:10423674
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125383" target="_blank" >10.1016/j.jcrysgro.2019.125383</a>

Result language
angličtina
Original language name
Improvement of luminescence properties of n-GaN using TEGa precursor
Original language description
The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. MOVPE grown GaN buffer layers on sapphire substrates are usually grown from TMGa precursor at the temperatures above 1000 degrees C. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Both defect bands are detrimental for all major nitride device applications. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n-doped GaN layers. Different kinds of growth parameters, such as growth temperature or growth rate, have been studied. It is also shown that the change of carrier gas (H-2 or N-2) has very strong influence on the layer quality. H-2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N-2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single V-Ga in H-2 atmosphere and clustering of V-Ga to big complexes ((V-Ga)(3)(V-N)(n)) in N-2 atmosphere.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20500 - Materials engineering

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)