Improvement of luminescence properties of n-GaN using TEGa precursor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533199" target="_blank" >RIV/68378271:_____/20:00533199 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/20:10423674 RIV/46747885:24220/20:00010358
Result on the web
<a href="https://doi.org/10.1016/j.jcrysgro.2019.125383" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2019.125383</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125383" target="_blank" >10.1016/j.jcrysgro.2019.125383</a>
Alternative languages
Result language
angličtina
Original language name
Improvement of luminescence properties of n-GaN using TEGa precursor
Original language description
The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n–doped GaN layers. Different kinds of growth parameters have been studied. It is also shown that the change of carrier gas (H2 or N2) has very strong influence on the layer quality. H2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single VGa in H2 atmosphere and clustering of VGa to big complexes ((VGa)3(VN)n) in N2 atmosphere.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
531
Issue of the periodical within the volume
Feb
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000504205900023
EID of the result in the Scopus database
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