Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F20%3A00007911" target="_blank" >RIV/46747885:24620/20:00007911 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.jpcc.0c08301" target="_blank" >10.1021/acs.jpcc.0c08301</a>
Alternative languages
Result language
angličtina
Original language name
Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction
Original language description
The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention has been paid to the employment of photonics-based strategies, which lately demonstrated to have great potential for the structural modification of semiconductors. In the current work, we report the laser-mediated generation of heterojunctions between Ag2CrO4 and Bi2O3, two semiconductors with contrasting properties. The products were prepared by the laser irradiation of different semiconductor's mixture ratios and further analyzed using various electron-and photon-based characterization techniques, different from mechanical grinding, which is considered the most straightforward way to obtain heterojunctions. The laser's intense optical field prompted not only the formation of tight and uniform junctions between the composing semiconductors but also induced Ag and Bi nanoparticles' production on their surfaces. This resulted in a modulation of the optical band gap to the narrowest value found in the semiconductor components and low recombination of the photoinduced charge carriers regardless of the amount ratio of the composing semiconductors. Therefore, this work will be of great importance for the creation of materials with a potential exploitability in the light-powered sectors.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physical Chemistry C
ISSN
1932-7447
e-ISSN
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Volume of the periodical
124
Issue of the periodical within the volume
48
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
26404-26414
UT code for WoS article
000598118800034
EID of the result in the Scopus database
2-s2.0-85096592605