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Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F20%3A00007911" target="_blank" >RIV/46747885:24620/20:00007911 - isvavai.cz</a>

  • Result on the web

    <a href="https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acs.jpcc.0c08301" target="_blank" >10.1021/acs.jpcc.0c08301</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

  • Original language description

    The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention has been paid to the employment of photonics-based strategies, which lately demonstrated to have great potential for the structural modification of semiconductors. In the current work, we report the laser-mediated generation of heterojunctions between Ag2CrO4 and Bi2O3, two semiconductors with contrasting properties. The products were prepared by the laser irradiation of different semiconductor's mixture ratios and further analyzed using various electron-and photon-based characterization techniques, different from mechanical grinding, which is considered the most straightforward way to obtain heterojunctions. The laser's intense optical field prompted not only the formation of tight and uniform junctions between the composing semiconductors but also induced Ag and Bi nanoparticles' production on their surfaces. This resulted in a modulation of the optical band gap to the narrowest value found in the semiconductor components and low recombination of the photoinduced charge carriers regardless of the amount ratio of the composing semiconductors. Therefore, this work will be of great importance for the creation of materials with a potential exploitability in the light-powered sectors.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20500 - Materials engineering

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physical Chemistry C

  • ISSN

    1932-7447

  • e-ISSN

  • Volume of the periodical

    124

  • Issue of the periodical within the volume

    48

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    11

  • Pages from-to

    26404-26414

  • UT code for WoS article

    000598118800034

  • EID of the result in the Scopus database

    2-s2.0-85096592605