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The properties of rare-earth doped zinc oxide/phthalocyanine structures for optoelectronics

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455086" target="_blank" >RIV/68378271:_____/15:00455086 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    The properties of rare-earth doped zinc oxide/phthalocyanine structures for optoelectronics

  • Original language description

    Zinc oxide (ZnO) is considered as one of the most important material for transparent electronics because of its attractive properties such as a direct wide band gap, nontoxicity, and high stability. It has been envisaged that functionality of the devicescan be enhanced Substantially by combining two different types of organic and inorganic semiconducting materials. Devices based on p-organic/n-ZnO heterojunction promise a great potential for future applications since p-type organic semiconductors are abundant. The phthalocyanine (Pc) compounds as p-type organics possess good light absorption extending down to the red and near-IR regions, and efficient electron transfer to ZnO. Pcs are known as indispensable components as the donor for the high efficiency bulk heterojunction organic photovoltaic devices and light emitting diodes. In such devices the electronic properties of the DA interface play a key role by affecting both the optical absorption induced .....

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů