Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00538098" target="_blank" >RIV/67985882:_____/20:00538098 - isvavai.cz</a>

Alternative codes found

RIV/00216208:11320/20:10423795

Result on the web

<a href="https://doi.org/10.3390/nano10030508" target="_blank" >https://doi.org/10.3390/nano10030508</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/nano10030508" target="_blank" >10.3390/nano10030508</a>

Result language

angličtina

Original language name

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Original language description

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nanomaterials

ISSN

2079-4991

e-ISSN

—

Volume of the periodical

10

Issue of the periodical within the volume

3

Country of publishing house

CH - SWITZERLAND

Number of pages

13

Pages from-to

508

UT code for WoS article

000526090400108

EID of the result in the Scopus database

2-s2.0-85081561393