Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00538001" target="_blank" >RIV/67985882:_____/20:00538001 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.mssp.2019.104808" target="_blank" >https://doi.org/10.1016/j.mssp.2019.104808</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2019.104808" target="_blank" >10.1016/j.mssp.2019.104808</a>

Result language

angličtina

Original language name

Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

Original language description

We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and the substrates locally modified by focused ion beam. The heterojunctions on focused ion beam-modified substrates show rectifying current-voltage characteristics, while the characteristics of the plain structures are symmetrical. Adsorption/desorption processes on the surface of ZnO nanorods strongly affect their electrical properties. We demonstrate that the electronic transport in the nanorods grown on focused ion beam-modified substrates is less sensitive to adsorption/desorption processes, which is related to their uniform nucleation and higher crystalline quality

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Science in Semiconductor Processing

ISSN

1369-8001

e-ISSN

—

Volume of the periodical

107

Issue of the periodical within the volume

1 March

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

104808

UT code for WoS article

000505017100013

EID of the result in the Scopus database

2-s2.0-85074342993